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| www.fairchildsemi.com FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Fairchild Power Switch(SPS) Features * * * * * * * * * * * * * * * Wide Operating Frequency Range Up to 150Khz Lowest Cost SMPS Solution Lowest External Components Low Start-up Current (max:170uA) Low Operating Current (max:15mA) Internal High Voltage SenseFET Built-in Auto-Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal TO-3P-5L 1 TO-220F-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram 3 Vpp=5.8/7.2V 1 - OSC SYNC Burst Mode Coltroller VFB VREF Internal Bias Vref 5 + + UVLO + + S R Roff PWM _ QB Vth=1V Ron VCC Vth=11/12V 4 2.5R Ifb R + Vfb Offset Idelay VREF VCC Rsense + Vth=7.5V VCC OLP S Uvlo Reset (VCC=9V) OCL Filter (130nsec) + Vth=1V 2 + - OVP Q Q S R Power-on Reset (VCC=6.5V) TSD (Tj=160) R Vth=30V Rev.1.0.1 (c)2001 Fairchild Semiconductor Corporation FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic Symbol BVPKG VD,MAX VDGR VGS IDM ID ID IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Total Power Dissipation Derating Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. TJ TA TSTG Value FS6S0965RT 650 650 30 36 9 7.2 25(950) 35 -0.3 to VCC -0.3 to 10 FS6S0965RT FS6S0965R FS6S0965RT FS6S0965R +160 -25 to +85 -55 to +150 48 170 0.385 1.33 3500 Unit V V V V ADC ADC ADC A(mJ) V V V W W / C C C C FS6S0965RT/FS6S0965R Drain to PKG Breakdown Voltage Maximum Drain Voltage Drain-Gate Voltage(RGS=1M) Gate-Source(GND) Voltage Drain Current Pulsed(1) Continuous Drain Current (Tc = 25C) Continuous Drain Current (Tc = 100C) Single Pulsed Avalanch Current(Energy (2)) Maximum Supply Voltage Input Voltage Range FS6S1265R Maximum Drain Voltage Drain-Gate Voltage(RGS=1M) Gate-Source(GND) Voltage Drain Current Pulsed (1) VD,MAX VDGR VGS IDM ID ID (2) 650 650 30 48 12 8.4 30(950) 35 -0.3 to VCC -0.3 to 10 240 1.92 +160 -25 to +85 -55 to +150 V V V ADC ADC ADC A(mJ) V V V W W / C C C C Continuous Drain Current (Tc = 25C) Continuous Drain Current (Tc = 100C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Derating TJ TA TSTG 2 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Continued) (Ta=25C, unless otherwise specified) Characteristic Symbol VD,MAX VDGR VGS IDM ID ID (2) Value 650 650 30 60 15 12.0 37(--) 35 -0.3 to VCC -0.3 to 10 280 2.22 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC A(mJ) V V V W W / C C C C FS6S15658R Maximum Drain Voltage Drain-Gate Voltage(RGS=1M) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25C) Continuous Drain Current (Tc = 100C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Derating TJ TA TSTG Notes : 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, VDD =50V, RG = 27, starting Tj = 25C 3. L = 13uH, starting Tj = 25C 3 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part) (Ta = 25C unless otherwise specified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) VGS=0V, VDS=25V, f = 1MHz Conditions VGS=0V, ID=50A VDS=Max., Rating, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance(1) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=4.5A VDS=50V, ID=4.5A Min. 650 Typ. 1.1 1300 135 25 25 75 130 70 45 8 22 Max. 200 300 1.2 nC nS pF Unit V A A S FS6S0965RT/FS6S0965R Drain-Source Breakdown Voltage FS6S1265R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge (1) BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=4.5A VDS=50V, ID=4.5A VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) 650 - 0.7 1820 185 32 38 120 200 100 60 10 30 200 300 0.9 - V A A S pF nS nC 4 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part; Continued) (Ta = 25C unless otherwise specified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=15.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=15.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) VGS=0V, VDS=25V, f = 1MHz Conditions VGS=0V, ID=50A VDS=Max., Rating, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance(1) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=4.5A VDS=50V, ID=4.5A Min. 650 Typ. 0.5 2590 270 50 50 155 270 125 90 15 45 Max. 200 300 0.65 nC nS pF Unit V A A S FS6S15658R Drain-Source Breakdown Voltage Note: (1) Pulse Test : Pulse width 300uS, Duty Cycle 2 % 1 (2) S = --R 5 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (CONTROL Part) (VCC=16V, Tamb = 25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (Note2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage Softstart Current Sync High Threshold Voltage(Note3) Sync Low Threshold Voltage(Note3) BURST MODE SECTION Burst Mode Low Threshold Voltage Burst Mode High Threshold Voltage Burst Mode Enable Feedback Voltage Burst Mode Peak Current Limit(Note4) Burst Mode Freqency VBURL VBURH VBEN IBURPK FBUR VFB=0V VFB=0V VCC=10.5V VCC=10.5V , VFB=0V VCC=10.5V , VFB=0V FS6S0965R Peak Current Limit (Note4) PROTECTION SECTION Over Voltage Protcetion Over Current Latch voltage(Note3) Thermal Shutdown Tempature(Note2) TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART IOP IOP(MIN) IOP(MAX) VFB=GND, VCC=14V VFB=GND, VCC=16V VFB=GND, VCC=12V VFB=GND, VCC=30V 10 15 mA 0.1 0.17 mA VOVP VOCL TSD VCC 27V 27 0.9 140 30 1.0 160 33 1.1 V V C IOVER FS6S1265R FS6S15658R 10.4 11.4 0.7 0.6 40 5.28 7.04 7.04 11.0 12.0 1.0 0.85 50 6.0 8.0 8.0 11.6 12.6 1.3 1.1 60 6.72 8.96 8.96 A V V V A kHz VSS ISS VSYNCH VSYNCL VFB=2V VSS=0V VCC=16V , VFB=5V VCC=16V , VFB=5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V IFB VSD IDELAY VFB=GND VFB 6.9V VFB=5V 0.7 6.9 1.6 0.9 7.5 2.0 1.1 8.1 2.4 mA V FOSC FSTABLE FOSC DMAX DMIN 12V VCC 23V -25C a 85C 22 0 0 92 25 1 5 95 28 3 10 98 0 kHz % % % % VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 V V Symbol Conditions Min. Typ. Max. Unit A CURRENT LIMIT(SELF-PROTECTION)SECTION Note: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 6 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics 0.15 0.12 0.09 [mA] Istart 10.2 10.0 9.8 9.6 [mA] Iop 0.06 9.4 0.03 0.00 -25 0 25 50 Temp 75 100 125 150 9.2 9.0 -25 0 25 50 Temp 75 100 125 150 Figure 1. Start Up Current vs. Temp. Figure 2. Operating Supply Current vs. Temp. 16.0 15.6 15.2 [V] Vstart 9.10 9.06 9.02 [V] Vstop 14.8 8.98 14.4 14.0 13.6 -25 0 25 50 Temp 75 100 125 150 8.94 8.90 -25 0 25 50 Temp 75 100 125 150 Figure 3. Start Threshold Voltage vs. Temp. [kHz] Fosc Figure 4. Stop Threshold Voltage vs. Temp. 26.0 25.2 24.4 23.6 22.8 22.0 -25 96.0 95.6 95.2 94.8 94.4 94.0 [%] Dmax 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 Figure 5. Initial Frequency vs. Temp. Figure 6. Maximum Duty vs. Temp. 7 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics (Continued) [V] 0.50 Voff 1.05 1.00 0.95 0.90 0.85 [mA] Ifb 0.40 0.30 0.20 0.80 0.10 -25 0 25 50 Temp 75 100 125 150 0.75 -25 0 25 50 Temp 75 100 125 150 Figure 7. Feedback Offset Voltage vs. Temp. [uA] Idelay Figure 8. Feedback Source Current vs. Temp. [V] Vsd 2.10 7.60 2.02 7.56 1.94 1.86 7.52 7.48 1.78 7.44 1.70 -25 0 25 50 Temp 75 100 125 150 7.40 -25 0 25 50 Temp 75 100 125 150 Figure 9. Shutdown Delay Current vs. Temp. [V] Vss Figure 10. Shutdown Feedback Voltage vs. Temp. 5.10 31.0 30.6 30.2 [V] Vovp 5.06 5.02 4.98 29.8 29.4 29.0 -25 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 4.94 4.90 Figure 11. Softstart Voltage vs. Temp. Figure 12. Over Voltage Protection vs. Temp. 8 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics (Continued) 11.2 [V] Vburl 12.3 12.2 [V] Vburh 11.1 12.1 11.0 12.0 11.9 10.9 11.8 10.8 -25 0 25 50 Temp 75 100 125 150 11.7 -25 0 25 50 Temp 75 100 125 150 Figure 13. Burst Mode Low Voltage vs. Temp. [kHz] Fbur Figure 14. Burst Mode High Voltage vs. Temp. 53.0 1.60 [V] Vben 51.0 1.20 49.0 0.80 47.0 0.40 45.0 43.0 -25 0 25 50 Temp 75 100 125 150 0.00 -25 0 25 50 Temp 75 100 125 150 Figure 15. Burst Mode Frequency vs. Temp. [A] Ibur_pk Figure 16. Burst Mode Enable Voltage vs. Temp. [A] Iover 0.98 6.20 0.95 6.10 0.92 6.00 0.89 5.90 0.86 5.80 0.83 -25 0 25 50 Temp 75 100 125 150 5.70 -25 0 25 50 Temp 75 100 125 150 Figure 17. Burst Mode Peak Current vs. Temp. Figure 18. Peak Current Limit vs. Temp. 9 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions TO-3P-5L 10 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-3P-5L (Forming) 11 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L 12 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L (Forming) 13 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R TOP Mark and Pinout Information F SXXYY Pin No. 1 2 3 4 5 Symbol Drain GND VCC F/B S/S Description SenseFET Drain Ground (Source) Control Part Supply Input PWM Non Inverting Input Soft start & External Sync. MARKING 1 Device FS6S0965R FS6S0965RT FS6S1265R FS6S15658R 6S0965R 6S1265R 6S15658R MARKING Notes ; (1) F ; Fairchild Semiconductor (2) 6S0965R, 6S1265R, 6S15658R ; Device Marking Name (3) S: Plant Code (SPS: S) (4) XX: Patweek Based on Fairchild Semiconductor Work Month Calender (5) YY: Last Two Digit of Calender Year 14 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Ordering Information Product Number FS6S0965R-TU FS6S0965R-YDTU FS6S0965RT-TU FS6S0965RT-YDTU FS6S1265R-TU FS6S1265R-YDTU FS6S15658R-TU FS6S15658R-YDTU TU : Non Forming Type YDTU : Forming Type Package TO-3P-5L TO-3P-5L(Forming) TO-220F-5L TO-220F-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Marking Code 6S0965R 6S0965R 6S1265R 6S15658R BVdss 650V 650V 650V 650V Rds(on) 1.1 1.1 0.7 0.5 15 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2/5/01 0.0m 001 2001 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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